| Specification | Details |
|---|---|
| Model Number | MZILG1T9HCJR-00A07 |
| Series | PM1653 |
| Capacity | 1.92 TB |
| Form Factor | 2.5-inch |
| Interface | SAS 24Gb/s |
| NAND Type | Samsung 128-layer V-NAND TLC |
| Controller | Samsung Rhino |
| Sequential Read Speed | Up to 4,200 MB/s |
| Sequential Write Speed | Up to 2,400 MB/s |
| Random Read (4KB, QD32) | Up to 720,000 IOPS |
| Random Write (4KB, QD32) | Up to 85,000 IOPS |
| Endurance (DWPD) | 1.0 DWPD over 5 years |
| MTBF | 2 million hours |
| Data Protection | End-to-end data protection, Power loss protection |
| Encryption Support | AES 256-bit, TCG/Opal V2.0, IEEE1667 |
| Power Consumption | Read: 7.0W, Write: 9.0W, Idle: 4.5W |
| Operating Temperature | 0°C to 70°C |
| Dimensions (WxDxH) | 100 x 70 x 15 mm |
| Weight | ≤ 150 g |
| Specification | Details |
|---|---|
| Model Number | MZILG1T9HCJR-00A07 |
| Series | PM1653 |
| Capacity | 1.92 TB |
| Form Factor | 2.5-inch |
| Interface | SAS 24Gb/s |
| NAND Type | Samsung 128-layer V-NAND TLC |
| Controller | Samsung Rhino |
| Sequential Read Speed | Up to 4,200 MB/s |
| Sequential Write Speed | Up to 2,400 MB/s |
| Random Read (4KB, QD32) | Up to 720,000 IOPS |
| Random Write (4KB, QD32) | Up to 85,000 IOPS |
| Endurance (DWPD) | 1.0 DWPD over 5 years |
| MTBF | 2 million hours |
| Data Protection | End-to-end data protection, Power loss protection |
| Encryption Support | AES 256-bit, TCG/Opal V2.0, IEEE1667 |
| Power Consumption | Read: 7.0W, Write: 9.0W, Idle: 4.5W |
| Operating Temperature | 0°C to 70°C |
| Dimensions (WxDxH) | 100 x 70 x 15 mm |
| Weight | ≤ 150 g |
